A 1/4-inch 8Mpixel back-illuminated stacked CMOS image sensor

• Published in: 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers pp. 484 - 485
• Main Authors: Sukegawa, S., Umebayashi, T., Nakajima, T., Kawanobe, H., Koseki, K., Hirota, I., Haruta, T., Kasai, M., Fukumoto, K., Wakano, T., Inoue, K., Takahashi, H., Nagano, T., Nitta, Y., Hirayama, T., Fukushima, N.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-02-2013
• Subjects: Bismuth; CMOS image sensors; Image quality; Motion pictures; Noise; Through-silicon vias; Transistors
• ISBN: 9781467345156; 1467345156
• ISSN: 0193-6530; 2376-8606
• DOI: 10.1109/ISSCC.2013.6487825

In recent years, cellphone cameras have come to require much more diversification and increased functionalities, due to the strong growth of the smartphone market. In addition to the image quality, speed, and pixel counts that conventional image sensors require, there is high demand for new functions that can respond to various photo-taking scenes. We developed a stacked CMOS image sensor (CIS), composed of conventional back-illuminated (BI) image-sensor technology and 65nm standard logic technology.