Out-of-plane strain effect on silicon-based flexible FinFETs

Out-of-plane strain effect on silicon-based flexible FinFETs

Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhanc...

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Bibliographic Details
Published in:2015 73rd Annual Device Research Conference (DRC) pp. 95 - 96
Main Authors: Ghoneim, Mohamed T., Alfaraj, Nasir, Torres Sevilla, Galo A., Fahad, Hossain M., Hussain, Muhammad M.
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2015
Subjects:
Artificial intelligence
Logic gates
Stress
Surface treatment
Online Access:Get full text
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Summary:Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
ISBN:9781467381345
1467381349
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2015.7175572