900V silicon carbide MOSFETs for breakthrough power supply design

• Published in: 2015 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 4145 - 4150
• Main Authors: Pala, Vipindas, Barkley, Adam, Hull, Brett, Gangyao Wang, Sei-Hyung Ryu, Van Brunt, Edward, Lichtenwalner, Daniel, Richmond, Jim, Jonas, Charlotte, Capell, Craig, Allen, Scott, Casady, Jeffrey, Grider, David, Palmour, John
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-09-2015
• Subjects: 900 V; C3M; Immune system; LED Driver; Light emitting diodes; MOSFET; SiC MOSFET; Silicon; Silicon carbide; Switching loss; Topology
• ISSN: 2329-3721; 2329-3748
• DOI: 10.1109/ECCE.2015.7310245

Improvements in 900V SiC MOSFET technology have resulted in switches that have extremely low ON resistance in high-speed packages. 900V SiC MOSFETs are promising candidates for hard switched and soft-switched power supply applications due to low ON resistance at higher temperature, a robust low-recovery body diode, avalanche capability and low output stored charge. System designers will be able to use these features to enable novel topologies and achieve large improvements in power density and efficiency. As an example, a 220 W single-stage flyback LED driver is presented, which achieves 40% size reduction over a 650V silicon MOSFET based solution, obtains similar efficiencies and a lower BOM cost.