Conduction mechanism of single-electron transistors fabricated by field-emission-induced electromigration

We report the conduction mechanism of the single-electron transistors (SETs) fabricated by field-emission-induced electromigration, which is so-called "activation". By applying the activation to Ni nanogaps, we were easily able to fabricate the SETs operating at room temperature. Additiona...

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Bibliographic Details
Published in:	2013 IEEE 5th International Nanoelectronics Conference (INEC) pp. 211 - 214
Main Authors:	Akimoto, S., Suda, R., Ito, M., Ando, M., Shirakashi, J.
Format:	Conference Proceeding Journal Article
Language:	English
Published:	IEEE 01-01-2013
Subjects:	Activation Conferences Coulomb blockade and single-electron transistor Coulomb friction Electrodes Electromigration field emission current Islands Nanoelectronics nanogap Nickel Oscillators Single electron transistors Staircases Temperature Temperature measurement Voltage measurement
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Summary:	We report the conduction mechanism of the single-electron transistors (SETs) fabricated by field-emission-induced electromigration, which is so-called "activation". By applying the activation to Ni nanogaps, we were easily able to fabricate the SETs operating at room temperature. Additionally, strong Coulomb staircases were clearly obtained, and the quasi-periodic current oscillations were also observed at room temperature. These results indicate that the higher charging energy associated with a smaller Ni island structure within the multiple islands causes a bottleneck mechanism in conduction, improving the Coulomb staircase structures.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Conference-1 ObjectType-Feature-3 content type line 23 SourceType-Conference Papers & Proceedings-2
ISBN:	1467348406 9781467348409
ISSN:	2159-3523 2159-3523
DOI:	10.1109/INEC.2013.6466001