A new experimental method for evaluating electric field at the junctions of DRAM cell transistors and the effect of electric field strength on the retention characteristics of DRAM

A new method for the analysis of DRAM data retention characteristics is developed. We use a test element group (TEG) and detailed simulation to analyze the bias dependence of the junction leakage currents of DRAM. We consequently develop an experimental method for the evaluation of electric field at...

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Bibliographic Details
Published in:	2004 IEEE International Reliability Physics Symposium. Proceedings pp. 157 - 164
Main Authors:	Mori, Y., Takeda, Y., Kimura, S., Ohyu, K., Uchiyama, H., Yamada, R.
Format:	Conference Proceeding
Language:	English
Published:	Piscataway NJ IEEE 2004
Subjects:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Equations Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Laboratories Leakage current Manufacturing MOSFETs P-n junctions Probability distribution Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing Threshold voltage Transistors Electric field Random access memory Integrated circuit Retention factor Transistor Leakage current Electric field effect Dynamic random access memory
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