Relaxation of conductance during DC voltage pulse off time in TiN/Hf/HfOx/Au/ HfOx/ TiN -device

Relaxation of conductance during DC voltage pulse off time in TiN/Hf/HfOx/Au/ HfOx/ TiN -device

We measured conductance change of the TiN/Hf/HfOx/ Au/HfOx/TiN device by applying voltage pulses, and investigated pulse off time dependence of conductance change. There was a recovery of conductance during pulse off, and conductance change is dependent on the pulse off time. We estimated the relaxa...

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Bibliographic Details
Published in:2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1 - 3
Main Authors: Huang, C.Y., Tanaka, M., Shimizu, T., Ito, T., Shingubara, S.
Format: Conference Proceeding
Language:English
Published: IEEE 07-03-2023
Subjects:
artificial synapse
Hardware
Neural networks
Pulse measurements
relaxation
Resistance
RRAM
Time measurement
Tin
Voltage measurement
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Summary:We measured conductance change of the TiN/Hf/HfOx/ Au/HfOx/TiN device by applying voltage pulses, and investigated pulse off time dependence of conductance change. There was a recovery of conductance during pulse off, and conductance change is dependent on the pulse off time. We estimated the relaxation time of the recovery process. It may be concluded that the amount of resistance change is dependent on the pulse off time, and we can choose a desired condition of conductance change rate suitable for artificial synapse.
DOI:10.1109/EDTM55494.2023.10103017