Thin Gate Oxide CMOS DC-DC Buck Converter with Floating Gate Drivers

This document is a model and instructions for \text{DT}_{\mathrm{E}}\mathrm{X} . This work focuses on the design of a CMOS DC-DC buck converter targeting input voltages higher than the limited gate-source voltage common in thin oxide technology. This is enabled by driving the power device gates usin...

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Bibliographic Details
Published in:2024 Argentine Conference on Electronics (CAE) pp. 120 - 123
Main Authors: Gak, Joel, Marin, Jorge, Gonzalez, Nicolas, Arevalos, Daniel, Calarco, Nicolas, Miguez, Matias, Cortes, Alfonso, Osorio, Vicente, Romero, Mario, Rojas, Christian A.
Format: Conference Proceeding
Language:English
Published: IEEE 07-03-2024
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Summary:This document is a model and instructions for \text{DT}_{\mathrm{E}}\mathrm{X} . This work focuses on the design of a CMOS DC-DC buck converter targeting input voltages higher than the limited gate-source voltage common in thin oxide technology. This is enabled by driving the power device gates using fully integrated circuitry which allows floating voltages in the high -side device using bootstrapping. The gate driver has been fully characterized in simulation, showing low to high an high to low times below 12ns . The bootstrapped level shifter has been integrated together with a dual-NMOS half bridge using the Skywater 130nm Opensource CMOS technology. Simulations show a peak efficiency of 91 % at 38.2mA current load for a 10V to 3.3V DC-DC conversion, extending the input voltage range previously reported in this technology by 2\mathrm{X} .
ISSN:2836-1024
DOI:10.1109/CAE59785.2024.10487162