An Effective Faulty TSV Detection Scheme for TSVs in High Bandwidth Memory

• Published in: 2023 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 1 - 5
• Main Authors: Junsen, He, Yoon, Dong-Hyun, Kim, Tony Tae-Hyoung
• Format: Conference Proceeding
• Language: English
• Published: IEEE 21-05-2023
• Subjects: 3-D IC; Bandwidth; Circuit faults; Fault diagnosis; faulty TSV detection; High bandwidth memory; Integrated circuit interconnections; Manuals; Resistance; sensor; transceiver; Transceivers
• ISSN: 2158-1525
• DOI: 10.1109/ISCAS46773.2023.10181848

Through-Silicon Vias (TSVs) are essential parts of interconnects in 3-D ICs such as high bandwidth memory (HBM). TSV defects from fabrication or electromigration can increase the resistance of defective TSVs and degrade signal integrity. As many TSVs are implemented in HBMs, effective testing of TSVs and identifying defective TSVs become evermore significant. In this paper, we propose a faulty TSV detection scheme for identifying the locations of faulty TSVs without time-consuming manual probing. TSV conditions are sensed by transmission signal between transceivers. Such signal will also operate in transition-time-to-voltage converter and sensor for TSV condition checking. The location of faulty TSV indication signals from the sensors in each core die will transmit back to the base logic die for further operations. Moreover, the proposed detector can detect faulty TSVs while the transceivers are operating.