Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment

• Published in: IEEE transactions on electron devices Vol. 63; no. 9; pp. 3466 - 3472
• Main Authors: Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Shih-Chien Liu, Yen-Ku Lin, Sze, Simon M., Chang, Edward Yi
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-09-2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: AlN; Aluminum nitride; Hafnium compounds; high- kappa dielectric; III-V semiconductor materials; Indium gallium arsenide; InGaAs MOSFET; interfacial passivation layer (IPL); Logic gates; MOSFET; NH3 plasma treatment; Plasma; plasma-enhanced atomic layer deposition (PEALD); Plasmas
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2016.2593022

We report a notable improvement in performance, electron transport, and reliability of HfO 2 /In 0.53 Ga 0.47 As nMOSFETs using a plasma-enhanced atomic layer deposition AlN interfacial passivation layer (IPL) and NH 3 postremote plasma treatment (PRPT). The interface state density D it decreased by approximately one order of magnitude from 6.1×10 12 to 4×10 11 cm -2 eV -1 , and the border trap density Nbt also declined ten times from 2.8×10 19 to 2.7×10 18 cm -3 , resulting in the reduction of the accumulation frequency dispersion and eliminate the inversion hump in C-V characteristics, and thus improves the device performances. Furthermore, positive bias temperature instability stress indicates that the sample with the AlN IPL and NH 3 PRPT is more reliable than the sample without any IPL and plasma treatment. During PBT stress, a smaller threshold voltage shift and less transconductance degradation were observed for the sample with the AlN IPL and NH 3 PRPT. In addition, the maximum overdrive voltage for a ten-year operating lifetime increased from 0.19 to 0.41 V.