Modeling and Simulation of Si IGBTs

• Published in: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 129 - 132
• Main Authors: Shigyo, N., Watanabe, M., Kakushima, K., Hoshii, T., Furukawa, K., Nakajima, A., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., Iwai, H.
• Format: Conference Proceeding
• Language: English
• Published: The Japan Society of Applied Physics 23-09-2020
• Subjects: carrier-carrier scattering; IGBT; injection enhancement effect; Insulated gate bipolar transistors; Predictive models; Scattering; Semiconductor device measurement; Semiconductor process modeling; Silicon; Solid modeling; TCAD simulation; three-dimension current flow; trench-gate
• ISSN: 1946-1577
• DOI: 10.23919/SISPAD49475.2020.9241627

Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate IGBTs were compared with measurements. The difference between 3D- and 2D-TCAD simulations was observed in a high current region, which was explained by a bias-dependent current flow. A test element group (TEG) for separation of the emitter currents for holes and electrons was also determined as effective for calibration of lifetime model parameters.