Impact of a non-uniform p-base doping concentration on the electrical characteristics of a low power MOSFET in 4H-SiC

• Published in: 2019 International Conference on Advanced Electrical Engineering (ICAEE) pp. 1 - 4
• Main Authors: Bencherif, Hichem, Dehimi, Lakhdar, Pezzimenti, Fortunato, Yousfi, Abderrahim, De Martino, Giuseppe, Della Corte, Francesco G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-11-2019
• Subjects: 4H-SiC; doping profile; Doping profiles; JFETs; MOSFET; Numerical simulation; on-resistance; Semiconductor process modeling; simulations; Threshold voltage
• DOI: 10.1109/ICAEE47123.2019.9014701

The role of a non-uniform p-base doping concentration in determining the electrical characteristics of a metal oxide semiconductor field effect transistor (MOSFET) in 4H-SiC is investigated. In particular, the device is dimensioned for low voltage ratings and its on-resistance (Ron) behavior is analyzed by means of numerical simulations. The results reveal that the proposed MOSFET shows in forward bias a high drain current, a low threshold voltage, and a low Ron if compared with previous literature data on similar device structures. This study would help in obtaining an improved performance for a low breakdown voltage 4H-SiC MOSFET which could turn useful, for example, as power optimizer in photovoltaic module-level applications.