A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures

• Published in: 2022 IEEE International Reliability Physics Symposium (IRPS) pp. P45-1 - P45-4
• Main Authors: Tan, T. L., Eng, C. W., Xu, H., Soon, J. M., Ebard, E., Siddabathula, M., Phoong, B. F., Poh, K. H., Prabhu, M., Zhao, X. -L., Koo, J. M., Cho, K., Zhang, G.-W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-03-2022
• Subjects: Clamps; Correlation; deep N-well; Gate leakage; Integrated circuit reliability; Layout; Logic gates; PID; Reliability engineering; test structures; well charging
• DOI: 10.1109/IRPS48227.2022.9764564
• EISSN: 1938-1891

Antenna rules relating to well charging is becoming an important aspect to consider in design rule checks on the product apart from the conventional antenna to gate ratio design rules. In this paper, we provided a better understanding of the well charging phenomena in technologies with deep N-Well using different layout configuration test structures that are typical of a circuit. A new power law correlation with a well exponent value based on characterized PID gate leakage data is introduced. Moreover, a comparison of well charging design solutions is also presented and validated on the circuit-like test structures.