Carbon nanotube Schottky diodes for high frequency applications

Carbon nanotube Schottky diodes for high frequency applications

We have developed Schottky diodes using semiconducting nanotubes with titanium Schottky and platinum Ohmic contacts. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. The performance prediction as room-temperature detectors at 2.5 THz resulted in NEP potentially comparab...

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Bibliographic Details
Published in:2005 Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics Vol. 1; pp. 285 - 286 vol. 1
Main Authors: Manohara, H.M., Wong, E.W., Schlecht, E., Hunt, R.D., Siegel, P.H.
Format: Conference Proceeding
Language:English
Published: IEEE 2005
Subjects:
Carbon nanotubes
Detectors
Frequency
Ohmic contacts
Platinum
Schottky diodes
Semiconductivity
Semiconductor diodes
Semiconductor nanotubes
Titanium
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Summary:We have developed Schottky diodes using semiconducting nanotubes with titanium Schottky and platinum Ohmic contacts. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. The performance prediction as room-temperature detectors at 2.5 THz resulted in NEP potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes in the range of 10/sup -13/ W//spl radic/Hz.
ISBN:9780780393486
0780393481
ISSN:2162-2027
DOI:10.1109/ICIMW.2005.1572520