Ellipsometry for cSiGe metrology

Ellipsometry for cSiGe metrology

In this paper we report the effectiveness of optical ellipsometry in measuring thickness and Germanium % of channel SiGe on SOI substrate used in advanced node high performance semiconductor devices.

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Bibliographic Details
Published in:25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014) pp. 42 - 45
Main Authors: Farhat, Saiqa, Rangarajan, Srinivasan, Mcardle, Timothy J., Steigerwalt, Michael, Dawei Hu, Ming Dai
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2014
Subjects:
cSiGe
Ellipsometry
Ge Concentration
Metrology
Optical films
Optical sensors
Optical variables measurement
Semiconductor device measurement
Thickness
Thickness measurement
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Description
Summary:In this paper we report the effectiveness of optical ellipsometry in measuring thickness and Germanium % of channel SiGe on SOI substrate used in advanced node high performance semiconductor devices.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2014.6846974