Conduction mechanisms of P3HT: PCBM solar cell

• Published in: 2009 Spanish Conference on Electron Devices pp. 398 - 401
• Main Authors: Nolasco, J.C., Cabre, R., Marsal, L.F., Pacios, R., Waldauf, C., Neophytou, M., Palomares, E., Pallares, J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-02-2009
• Subjects: Current measurement; Current-voltage characteristics; Electric resistance; Electric variables; Electric variables measurement; Equivalent circuits; Indium tin oxide; Photovoltaic cells; Temperature measurement; Voltage
• ISBN: 9781424428380; 1424428386
• ISSN: 2163-4971; 2643-1300
• DOI: 10.1109/SCED.2009.4800517

In order to get a deeper understanding of the conduction mechanisms limiting the electrical characteristics of ITO/PEDOT:PSS/P3HT:PCBM/Al solar cells, dark current-voltage measurements at different temperatures were analyzed using a compact electrical equivalent circuit previously used in p/n junctions. Between 0.2 V and 0.6 V, the current-voltage characteristic is modeled by an exponential term which can be described by Multi-Tunneling Capture Emission process. For larger voltage, the model takes into account Space-Charge Limited process and series resistance. In addition, the model is useful to calculate the built in potential of the solar cell using only dark current-voltage-temperature measurements.