Current transport mechanisms of amorphous n-doped silicon carbide/crystalline silicon heterostructure: Impact of nitrogen dopation

• Published in: 2012 35th International Spring Seminar on Electronics Technology pp. 25 - 30
• Main Authors: Perny, M., Mikolasek, M., Saly, V., Huran, J., Orszagh, J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-05-2012
• Subjects: Amorphous silicon; Current measurement; Silicon carbide; Substrates; Temperature; Temperature measurement
• ISBN: 9781467322416; 1467322415
• ISSN: 2161-2528
• DOI: 10.1109/ISSE.2012.6273102

Amorphous silicon carbide (a-SiC) thin films were prepared by PECVD deposition technique. A gas mixture of SiH 4 , CH 4 and NH 3 was directly introduced into the reaction chamber through a shower head. Properties of deposited films were studied by electrical measurement. Temperature dependences of forward (FW) current-voltage (I-V) characteristics of Al/a-SiC/c-Si(p)/Al structures are shown and analyzed in this paper. Parameters as saturation current and activation energies were measured and calculated from forward biased I-V curves. Identification of bonds at surface of amorphous layers by FTIR was presented.