Quantum dot photonics: edge emitter, amplifier and VCSEL

• Published in: Proceedings of CAOL 2005. Second International Conference on Advanced Optoelectronics and Lasers, 2005 Vol. 1; pp. 1 - 4 vol. 1
• Main Authors: Hopfer, F., Kuntz, M., Lammlin, M., Ledentsov, N.N., Kovsh, A.R., Mikhrin, S.S., Kaiander, I., Haisler, V., Lochmann, A., Mutig, A., Schubert, C., Grote, N., Umbach, A., Ustinov, V.M., Pohl, U.W., Bimberg, D.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: Bit error rate; Current density; Digital modulation; Optical amplifiers; Photonics; Power generation; Quantum dots; Stability; Temperature; Vertical cavity surface emitting lasers
• ISBN: 9780780391307; 0780391306
• ISSN: 2160-1518; 2160-1534
• DOI: 10.1109/CAOL.2005.1553801

Low transparency current density and improved temperature stability with a large characteristic temperature T/sub 0/>650 K up to 80/spl deg/C are demonstrated for 1.3 /spl mu/m MBE grown QD-edge emitters. Digital modulation with an open eye pattern up to 12 Gb/s at room temperature and bit error rate below 10/sup -12/ for a 10 Gb/s modulation was realized for this wavelength. Semiconductor optical amplifiers based on InGaAs QDs achieved a chip gain of 28 dB. Conventionally doped semiconductor DBR QD-VCSEL containing 17 p-modulation doped QD layers demonstrated a CW output power of 1.7 mW and differential efficiency of 20 % at 20/spl deg/C. First MOCVD grown QD-VCSEL with selectively oxidized DBRs and 9 QD-layers were realized, emission was at 1.1 /spl mu/m. A CW multimode output power of 1.5 mW and external efficiency of 45 % was achieved at 20/spl deg/C. The minimum threshold current from a device with 2 /spl mu/m aperture was 85 /spl mu/A.