300 GHz six-stage differential-mode amplifier

• Published in: 2010 IEEE MTT-S International Microwave Symposium pp. 49 - 52
• Main Authors: Park, H J, Rieh, J S, Kim, M, Hacker, J B
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-05-2010
• Subjects: Cutoff frequency; DH-HEMTs; Dielectric substrates; Differential amplifiers; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Indium phosphide (InP); Integrated circuit interconnections; MODFETs; monolithic millimeter-wave integrated circuit (MMIC); Radiofrequency amplifiers; terahertz amplifier
• ISBN: 1424460565; 9781424460564
• ISSN: 0149-645X; 2576-7216
• DOI: 10.1109/MWSYM.2010.5518084

A 300 GHz amplifier is fabricated using indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The cascade chain in the amplifier contains six unit cells each containing a pair of common-base DHBTs in differential configuration. A total of three signal lines run through to the unit-cell to obtain the differential-mode amplifier gain and provide proper dc bias. Measured results show the peak gain of 17.3 dB at 290 GHz with 10-dB gain-bandwidth of 20 GHz.