Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier

• Published in: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) pp. 1 - 4
• Main Authors: Rodriguez, M. C., Tarazi, J., Dadello, A., Convert, E. R. O., McCulloch, M. G., Mahon, S. J., Hwang, S., Mould, R. G., Fattorini, A. P., Young, A. C., Harvey, J. T., Parker, A. E., Heimlich, M. C., Wen-Kai Wang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-10-2012
• Subjects: Frequency measurement; Gallium nitride; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement; Telecommunication standards
• ISBN: 1467309281; 9781467309288
• ISSN: 1550-8781; 2374-8443
• DOI: 10.1109/CSICS.2012.6340084

A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.