High breakdown AlGaN/GaN HEMTs employing double metal structure

We have proposed and fabricated AlGaN/GaN HEMTs employing a nickel oxide (NiO X ) based double metal structure which showed a stable reverse blocking characteristics. The leakage current of the proposed device was decreased by four orders of magnitude. The leakage current of the conventional device...

Full description

Bibliographic Details

Published in:	2012 24th International Symposium on Power Semiconductor Devices and ICs pp. 273 - 277
Main Authors:	Young-Shil Kim, Min-Woo Ha, O-Gyun Seok, Woo-Jin An, Min-koo Han
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2012
Subjects:	Aluminum gallium nitride Gallium nitride HEMTs Leakage current Logic gates MODFETs
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!