A 1.8 GHz to 2.1 GHz 0.25 μm CMOS wideband LNA for a multi-standard mobile receiver

A 1.8 GHz to 2.1 GHz 0.25 μm CMOS wideband LNA for a multi-standard mobile receiver

A single-ended wideband low noise amplifier for a multi-standard (1.8 GHz to 2.1 GHz) mobile receiver has been designed and simulated in a 0.25 μm CMOS technology process. The circuit topology is based on inductively degenerated common source (IDCS). The enhancement for bandwidth was performed using...

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Bibliographic Details
Published in:2007 International Symposium on Integrated Circuits pp. 422 - 425
Main Authors: Mustaffa, M.T., Zayegh, A., Veljanovski, R., Stojcevski, A.
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-2007
Subjects:
Bandwidth
Broadband amplifiers
Circuit noise
Circuit simulation
Circuit topology
CMOS process
CMOS technology
Gain
Low-noise amplifiers
Wideband
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Description
Summary:A single-ended wideband low noise amplifier for a multi-standard (1.8 GHz to 2.1 GHz) mobile receiver has been designed and simulated in a 0.25 μm CMOS technology process. The circuit topology is based on inductively degenerated common source (IDCS). The enhancement for bandwidth was performed using inductive shunt-peaking that added more freedom to the circuit. Circuit simulation results shows a power gain of 23 dB, a noise figure of 0.6 dB with IIP3 and 1-dB compression point of -5.1 dBm and -17.3 dBm respectively. The current consumption for this circuit is 9.5 mA with voltage supply of 2.5 V.
ISBN:9781424407965
1424407966
ISSN:2325-0631
DOI:10.1109/ISICIR.2007.4441888