Use of RF-based technique as a metrology tool for TSV reliability analysis

• Published in: 2013 IEEE 63rd Electronic Components and Technology Conference pp. 186 - 191
• Main Authors: Okoro, Chukwudi, Kabos, Pavel, Obrzut, Jan, Hummler, Klaus, Obeng, Yaw S.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-05-2013
• Subjects: Metals; Radio frequency; Reliability; Silicon; Stress; Thermal analysis; Through-silicon vias
• ISBN: 9781479902330; 1479902330
• ISSN: 0569-5503; 2377-5726
• DOI: 10.1109/ECTC.2013.6575570

In this work, radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity in TSV daisy chains degraded with thermal cycling. Focused ion beam (FIB) based failure analysis, showed that the root cause for this trend was due to the formation and propagation of voids with thermal cycling.