Nanowire electromechanical logic switch

• Published in: 2007 7th IEEE Conference on Nanotechnology (IEEE NANO) pp. 141 - 145
• Main Authors: Qiliang Li, Richter, C.A., Xiong, H.D., Suehle, J.S.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-08-2007
• Subjects: Electrodes; Electromechanical Switch; Logic gates; Medical services; Metals; Optical switches; Silicon; Silicon Nanowire; Subthreshold Slope; Switches; Transistor
• ISBN: 9781424406074; 1424406072
• ISSN: 1944-9399; 1944-9380
• DOI: 10.1109/NANO.2007.4601157

We present the integration and characterization of nanowire electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes. The devices operate with the suspended part of the nanowire bent to touch metal electrode via electromechanical force by applying voltage. The reversible switching, high on/off current ratio, small subthreshold slope and low switching energy compared to current Si CMOS make the switches very attractive for logic device application. In addition, we have developed a physical model to simulate the switching characteristics and extract the material properties.