A Novel Approach to Analyze Current-Voltage Characteristics of Double Gated-Memristor
Memristor is a nano-electronic device which relates charge and flux. It is an excellent candidate for emerging technologies. Memristor exits as either two- or three-terminal device. In this work, As far as we know to the best of our knowledge we are for the first time proposing four terminal memrist...
Saved in:
| Published in: | 2018 4th International Conference on Devices, Circuits and Systems (ICDCS) pp. 194 - 197 |
|---|---|
| Main Authors: | , |
| Format: | Conference Proceeding |
| Language: | English |
| Published: |
IEEE
01-03-2018
|
| Subjects: | |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Abstract | Memristor is a nano-electronic device which relates charge and flux. It is an excellent candidate for emerging technologies. Memristor exits as either two- or three-terminal device. In this work, As far as we know to the best of our knowledge we are for the first time proposing four terminal memristor known as double gated memristor. The structure of the double gated memristor resembles double gate MOSFET. The current-voltage analysis of double gated memristor is carried out in this paper work. It is observed that there is an improvement in the current of the double gated memristor in comparison to conventional memristor. It finds important application in analog, digital and neuromorphic circuits. |
|---|---|
| AbstractList | Memristor is a nano-electronic device which relates charge and flux. It is an excellent candidate for emerging technologies. Memristor exits as either two- or three-terminal device. In this work, As far as we know to the best of our knowledge we are for the first time proposing four terminal memristor known as double gated memristor. The structure of the double gated memristor resembles double gate MOSFET. The current-voltage analysis of double gated memristor is carried out in this paper work. It is observed that there is an improvement in the current of the double gated memristor in comparison to conventional memristor. It finds important application in analog, digital and neuromorphic circuits. |
| Author | Vijay, H M Ramakrishnan, V N |
| Author_xml | – sequence: 1 givenname: H M surname: Vijay fullname: Vijay, H M organization: Department of Micro and Nanoelectronics School of Electronics Engineering, VIT, Vellore, 632014, India – sequence: 2 givenname: V N surname: Ramakrishnan fullname: Ramakrishnan, V N organization: Department of Micro and Nanoelectronics School of Electronics Engineering, VIT, Vellore, 632014, India |
| BookMark | eNotj1FLwzAUhSMo6OZ-gQj5A603ydqkj6XTOZj6oPN13Da3rtI1Jc2E7ddbcU-HwweH70zYZec6YuxeQCwEZA-rYlG8H4cQSxAmNikkYp5dsIlIlEnVXKf6ms2G4RsAZGpUJtIbtsn5q_uhlud97x1WOx4czztsjyfixcF76kL06dqAX2PfoccqkG-G0FQDdzVfuEPZEl9iIBu90P4POX_LrmpsB5qdc8o2T48fxXO0fluuinwdNUInIRLZKGh1KTIpyzFpDmClwVGQtCktgqmEyRItrQZtAQEl1mqEEksFVk3Z3f9uQ0Tb3jd79Mft-bn6BWW7Ugs |
| ContentType | Conference Proceeding |
| DBID | 6IE 6IL CBEJK RIE RIL |
| DOI | 10.1109/ICDCSyst.2018.8605149 |
| DatabaseName | IEEE Electronic Library (IEL) Conference Proceedings IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume IEEE Xplore All Conference Proceedings IEEE Electronic Library Online IEEE Proceedings Order Plans (POP All) 1998-Present |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library Online url: http://ieeexplore.ieee.org/Xplore/DynWel.jsp sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISBN | 1538634767 9781538634769 |
| EndPage | 197 |
| ExternalDocumentID | 8605149 |
| Genre | orig-research |
| GroupedDBID | 6IE 6IF 6IL 6IN AAJGR ABLEC ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ CBEJK IEGSK OCL RIE RIL |
| ID | FETCH-LOGICAL-i175t-19149d7b1922bd7be400d28a000e78bda08c189572d707d0a0a2af30e72ab30d3 |
| IEDL.DBID | RIE |
| IngestDate | Thu Jun 29 18:39:35 EDT 2023 |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-i175t-19149d7b1922bd7be400d28a000e78bda08c189572d707d0a0a2af30e72ab30d3 |
| PageCount | 4 |
| ParticipantIDs | ieee_primary_8605149 |
| PublicationCentury | 2000 |
| PublicationDate | 2018-March |
| PublicationDateYYYYMMDD | 2018-03-01 |
| PublicationDate_xml | – month: 03 year: 2018 text: 2018-March |
| PublicationDecade | 2010 |
| PublicationTitle | 2018 4th International Conference on Devices, Circuits and Systems (ICDCS) |
| PublicationTitleAbbrev | ICDCSyst |
| PublicationYear | 2018 |
| Publisher | IEEE |
| Publisher_xml | – name: IEEE |
| SSID | ssj0002683916 |
| Score | 1.7362729 |
| Snippet | Memristor is a nano-electronic device which relates charge and flux. It is an excellent candidate for emerging technologies. Memristor exits as either two- or... |
| SourceID | ieee |
| SourceType | Publisher |
| StartPage | 194 |
| SubjectTerms | Adaptation models Double Gated Memristor Gated Memristor Logic gates Mathematical model Memristor Memristors Nonvolatile memory Random access memory |
| Title | A Novel Approach to Analyze Current-Voltage Characteristics of Double Gated-Memristor |
| URI | https://ieeexplore.ieee.org/document/8605149 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlZ1LT8JAEMcnwkkvPsD4zh48urC0sI8jKRA8SEwU443sdqaJCVKCxYOf3t3SoCRePHXTbrPJbNuZnc7_twC3sevIrCsj7vzDwrtdlXFDRnCSKWKW-UWGCHrn8ZOavOrBMGBy7rZaGCIqi8-oFZrlv3zM03VIlbW1DLRuU4OaMnqj1drmUyKpg4a0Eul0hGnfJ4MkYL9D_ZZuVffubKJS-pDR4f9GP4LmjxiPPW7dzDHs0eIEDn5xBBsw7bNJ_klz1q8I4azIWYkb-SJWEZj4Sz4v_MeDJbuIZpZnzEfRbk4sZNKQP9B7yRtYNWE6Gj4nY17tl8DffBBQ8IBqM6icD9oi54_k30-MtPXWIaUdWqHTjjY9FaESCoUVNrJZ7C9G1sUC41OoL_IFnQETvk9qpZI99O7LaKeslmi1sCbozvEcGsFAs-UGiTGrbHPx9-lL2A9zsCnduoJ6sVrTNdQ-cH1TTuI3RpudaA |
| link.rule.ids | 310,311,782,786,791,792,798,27934,54767 |
| linkProvider | IEEE |
| linkToHtml | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlZ3PT8IwFMdfBA_qxR9g_G0PHi2UbfTHkQwIRCAmgvFGWvqWmCAzODz419uOBSXx4mnN1qXJ67b3-va-nwLchabBk4gH1LiHhUaRSKhCxSjymbVJ4hYZzOude09i9CLbHY_Jud9oYRAxLz7Dmm_m__JtOlv5VFldck_rViXYbUaCi7Vaa5NRCbj0KtJCptNgqt6P27EHf_sKLlkr7t7aRiX3It3D_41_BNUfOR553DiaY9jBxQkc_CIJVmDSIqP0E-ekVTDCSZaSHDjyhaRgMNHndJ65zweJtyHNJE2Ii6PNHInPpVk6xLecOLCswqTbGcc9WuyYQF9dGJBRD2tTVhgXtgXGHdG9oTaQ2lkHhTRWMzlrSNUUgRVMWKaZDnQSuouBNiGz4SmUF-kCz4Aw12emueBN6xyYkkZoya2WTCuvPLfnUPEGmr6voRjTwjYXf5--hb3eeDiYDvqjh0vY9_OxLuS6gnK2XOE1lD7s6iaf0G-_0qC5 |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=2018+4th+International+Conference+on+Devices%2C+Circuits+and+Systems+%28ICDCS%29&rft.atitle=A+Novel+Approach+to+Analyze+Current-Voltage+Characteristics+of+Double+Gated-Memristor&rft.au=Vijay%2C+H+M&rft.au=Ramakrishnan%2C+V+N&rft.date=2018-03-01&rft.pub=IEEE&rft.spage=194&rft.epage=197&rft_id=info:doi/10.1109%2FICDCSyst.2018.8605149&rft.externalDocID=8605149 |