A breakdown model and lifetime projection for thin gate oxide MOS devices

An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which automatically accounts for all trapping, the oxide lifetimes under normal conditions could be estimated by extrapolating the high field accelerated data.

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Bibliographic Details
Published in:	Proceedings of the UGIM Symposium, Microelectronics Education for the Future. Twelfth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.97CH36030) pp. 78 - 82
Main Authors:	Liu, C.H., Grondin, R.O., DeMassa, T.A., Sanchez, J.J.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1997
Subjects:	Analytical models Cathodes Electric breakdown Electron traps EPROM Equations Life estimation Lifetime estimation Shape Tunneling
Online Access:	Get full text
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