A breakdown model and lifetime projection for thin gate oxide MOS devices

A breakdown model and lifetime projection for thin gate oxide MOS devices

An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which automatically accounts for all trapping, the oxide lifetimes under normal conditions could be estimated by extrapolating the high field accelerated data.

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Bibliographic Details
Published in:Proceedings of the UGIM Symposium, Microelectronics Education for the Future. Twelfth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.97CH36030) pp. 78 - 82
Main Authors: Liu, C.H., Grondin, R.O., DeMassa, T.A., Sanchez, J.J.
Format: Conference Proceeding
Language:English
Published: IEEE 1997
Subjects:
Analytical models
Cathodes
Electric breakdown
Electron traps
EPROM
Equations
Life estimation
Lifetime estimation
Shape
Tunneling
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Description
Summary:An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which automatically accounts for all trapping, the oxide lifetimes under normal conditions could be estimated by extrapolating the high field accelerated data.
ISBN:0780337905
9780780337909
ISSN:0749-6877
2375-5350
DOI:10.1109/UGIM.1997.616688