Future directions for DRAM memory cell technology
The development trend and concerns of cell technologies are reviewed, and future actions for DRAM cell and process module are discussed. The BEST cell and the BST cell are promising for giga bit era DRAM. The BEST cell has simple and robust processes, and the conventional capacitor dielectric film i...
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| Published in: | International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) pp. 355 - 358 |
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| Main Authors: | , , |
| Format: | Conference Proceeding |
| Language: | English |
| Published: |
IEEE
1998
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| Online Access: | Get full text |
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| Abstract | The development trend and concerns of cell technologies are reviewed, and future actions for DRAM cell and process module are discussed. The BEST cell and the BST cell are promising for giga bit era DRAM. The BEST cell has simple and robust processes, and the conventional capacitor dielectric film is available. The BST film development is the key to realizing giga bit era DRAM by using BST cell. |
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| AbstractList | The development trend and concerns of cell technologies are reviewed, and future actions for DRAM cell and process module are discussed. The BEST cell and the BST cell are promising for giga bit era DRAM. The BEST cell has simple and robust processes, and the conventional capacitor dielectric film is available. The BST film development is the key to realizing giga bit era DRAM by using BST cell. |
| Author | Hieda, K. Nitayama, A. Kohyama, Y. |
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| PublicationTitle | International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) |
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| Snippet | The development trend and concerns of cell technologies are reviewed, and future actions for DRAM cell and process module are discussed. The BEST cell and the... |
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| StartPage | 355 |
| SubjectTerms | Binary search trees Capacitors Costs Dielectric films Laboratories Microelectronics Random access memory Robustness Substrates Thermal resistance |
| Title | Future directions for DRAM memory cell technology |
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