Future directions for DRAM memory cell technology

Future directions for DRAM memory cell technology

The development trend and concerns of cell technologies are reviewed, and future actions for DRAM cell and process module are discussed. The BEST cell and the BST cell are promising for giga bit era DRAM. The BEST cell has simple and robust processes, and the conventional capacitor dielectric film i...

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Bibliographic Details
Published in:International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) pp. 355 - 358
Main Authors: Nitayama, A., Kohyama, Y., Hieda, K.
Format: Conference Proceeding
Language:English
Published: IEEE 1998
Subjects:
Binary search trees
Capacitors
Costs
Dielectric films
Laboratories
Microelectronics
Random access memory
Robustness
Substrates
Thermal resistance
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Summary:The development trend and concerns of cell technologies are reviewed, and future actions for DRAM cell and process module are discussed. The BEST cell and the BST cell are promising for giga bit era DRAM. The BEST cell has simple and robust processes, and the conventional capacitor dielectric film is available. The BST film development is the key to realizing giga bit era DRAM by using BST cell.
ISBN:0780347749
9780780347748
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1998.746373