XPS of Impurities Influence on Electronic Structure of Sn2P2S6 Ferroelectrics

• Published in: Ferroelectrics Vol. 418; no. 1; pp. 134 - 142
• Main Authors: Grigas, J., Talik, E., Glukhov, K., Fedyo, K., Stoika, I., Gurzan, M., Prits, I., Grabar, A., Vysochanskii, Yu
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Colchester Taylor & Francis Group 01-01-2011; Taylor & Francis
• Subjects: Clean metal, semiconductor, and insulator surfaces; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electron and ion emission by liquids and solids; impact phenomena; Electron density of states and band structure of crystalline solids; electron energy spectra; Electron states; Elements, oxides, nitrides, borides, carbides, chalcogenides, etc; Exact sciences and technology; ferroelectrics; impurities; Photoemission and photoelectron spectra; Physics; Semiconductor compounds; XPS; Band structure; Data analysis; Ferroelectric semiconductors; electron energy spectra; Indium additions; Electronic density of states; Core levels; Tellurium additions; P; ferroelectrics; S; Impurities; Binding energy; Sublattices; Density functional method; Tin Thiophosphates; XPS; Sn; Germanium additions; X-ray photoelectron spectra
• ISSN: 0015-0193; 1563-5112
• DOI: 10.1080/00150193.2011.578984

Influence of impurities of In, Te and Ge on the core level binding energies and the electronic structure of the valence band of Sn
2
P
2
S
6
ferroelectric crystals was investigated by X-ray photoelectron spectroscopy together with electron spectra first-principles calculations. It was found that the indium impurity induces donor states, the tellurium impurity modifies energy structure near the top of valence band, and germanium impurity improves stereoactivity of the cation sublattice that is related to the ferroelectric phase transition nature.