Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors

Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors

High efficiency single photon avalanche detectors (SPADs) based on the Ge-on-Si material system are a promising emerging technology for high sensitivity optical detection in the short-wave infrared region. Here we demonstrate record single photon detection efficiencies of 38% at 1310nm with an opera...

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Bibliographic Details
Published in:2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP) pp. 1 - 4
Main Authors: Kirdoda, Jaroslaw, Dumas, Derek C. S., Millar, Ross W., Mirza, Muhammad M., Paul, Douglas J., Kuzmenko, Kateryna, Vines, Peter, Greener, Zoe, Buller, Gerald S.
Format: Conference Proceeding
Language:English
Published: IEEE 01-12-2019
Subjects:
Absorption
Electric fields
Lasers
Measurement by laser beam
Photonics
Silicon
Temperature measurement
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Summary:High efficiency single photon avalanche detectors (SPADs) based on the Ge-on-Si material system are a promising emerging technology for high sensitivity optical detection in the short-wave infrared region. Here we demonstrate record single photon detection efficiencies of 38% at 1310nm with an operating temperature of 125K. This was achieved using a novel planar geometry which allowed us to achieve an NEPs of 3×10 −16 WHz −1/2 and reduced afterpulsing when compared to InGaAs/InP based SPADs operated in nominally identical conditions.
DOI:10.1109/BICOP48819.2019.9059574