Fast switching and long retention Fe-O ReRAM and its switching mechanism

Fast switching and long retention Fe-O ReRAM and its switching mechanism

A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe 3 O 4 and y-Fe 2 O 3 . Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to sup...

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Bibliographic Details
Published in:2007 IEEE International Electron Devices Meeting pp. 779 - 782
Main Authors: Muraoka, S., Osano, K., Kanzawa, Y., Mitani, S., Fujii, S., Katayama, K., Katoh, Y., Wei, Z., Mikawa, T., Arita, K., Kawashima, Y., Azuma, R., Kawai, K., Shimakawa, K., Odagawa, A., Takagi, T.
Format: Conference Proceeding
Language:English
Japanese
Published: IEEE 01-12-2007
Subjects:
Annealing
Anodes
Cities and towns
Crystalline materials
Electrodes
Infrared spectra
Iron
Region 1
Temperature
Zinc
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Summary:A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe 3 O 4 and y-Fe 2 O 3 . Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.
ISBN:1424415071
9781424415076
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2007.4419063