Impact of Hf concentration on performance and reliability for HfSiON-CMOSFET

• Published in: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 pp. 507 - 510
• Main Authors: Watanabe, T., Takayanagi, M., Kojima, K., Ishimaru, K., Ishiuchi, H., Sekine, K., Yamasaki, H., Eguchi, K.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2004
• Subjects: Applied sciences; Beak; Birds; Charge carrier density; CMOSFETs; Dielectrics; Electronics; Exact sciences and technology; Fluctuations; Hafnium; Miscellaneous; MOSFET circuits; Oxidation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon compounds; Performance evaluation; Scalability; Spacer; Low-power electronics; Reliability; Optimization; Damaging
• ISBN: 0780386841; 9780780386846
• DOI: 10.1109/IEDM.2004.1419202

65 nm gate length HfSiON-CMOSFET was fabricated with various Hf concentrations and gate spacers in view of device performance and reliability. The negative charges are generated in HfSiON/Si-substrate interface at the gate edge region for HfSiON with high Hf concentration. SiN offset spacer suppresses the charge generation and the degradation of drive current. Even so, HfSiON with low Hf concentration is higher at performance and reliability than that with high one. Moreover, the optimized HfSiON shows scalability of up to hp45 nm low standby power (LSTP).