Exploring Process-Voltage-Temperature Variations Impact on 4T1R Multiplexers for Energy-aware Resistive RAM-based FPGAs

Exploring Process-Voltage-Temperature Variations Impact on 4T1R Multiplexers for Energy-aware Resistive RAM-based FPGAs

Resistive Random Access Memory (RRAM) devices hold promise to improve the performance of full-CMOS Field Programmable Gate Arrays (FPGAs) exploiting their non-volatility, multilevel nature, small area requirement, and CMOS compatibility for the routing interconnections. Unfortunately, the adoption o...

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Bibliographic Details
Published in:2022 IEEE International Integrated Reliability Workshop (IIRW) pp. 1 - 5
Main Authors: Rizzi, Tommaso, Baroni, Andrea, Glukhov, Artem, Bertozzi, Davide, Wenger, Christian, Ielmini, Daniele, Zambelli, Cristian
Format: Conference Proceeding
Language:English
Published: IEEE 09-10-2022
Subjects:
Energy consumption
Low Conductance states
Multi-level
Multiplexing
Performance evaluation
Programming
Reliability
Resistance
Resistive RAM
Routing
RRAM
Variability
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Summary:Resistive Random Access Memory (RRAM) devices hold promise to improve the performance of full-CMOS Field Programmable Gate Arrays (FPGAs) exploiting their non-volatility, multilevel nature, small area requirement, and CMOS compatibility for the routing interconnections. Unfortunately, the adoption of this emerging technology is hindered by its intrinsic resistance stochastic behavior. In this work, we investigate how Process-Voltage-Temperature (PVT) variations affect the energy and propagation delay of 4T1R MUX circuits. The comparison with traditional CMOS implementations reveals that for large-sized MUX the RRAM technology is more energy efficient and robust to PVT variations.
ISSN:2374-8036
DOI:10.1109/IIRW56459.2022.10032753