n-MOS transistor impact ionization boosted by cumulative stress degradation in a 250 nm SiGe BiCMOS technology

n-MOS transistor impact ionization boosted by cumulative stress degradation in a 250 nm SiGe BiCMOS technology

We introduce experimental observations of impact ionization boosting in n-type MOSFET of a 250 nm SiGe BiCMOS technology, when operated under aging test conditions. The electrical characteristics of the transistor, such as drain current capability, transconductance, and threshold voltage degrade wit...

Full description

Saved in:
Bibliographic Details
Published in:2022 IEEE Latin American Electron Devices Conference (LAEDC) pp. 1 - 4
Main Authors: Edmundo A., Gutierrez D., Alan Y., Otero C., Xiomara Ribero, F.
Format: Conference Proceeding
Language:English
Published: IEEE 04-07-2022
Subjects:
Aging
BiCMOS integrated circuits
Boosting
Hot carriers
Impact ionization
nMOSFET
reliability
Threshold voltage
Transistors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We introduce experimental observations of impact ionization boosting in n-type MOSFET of a 250 nm SiGe BiCMOS technology, when operated under aging test conditions. The electrical characteristics of the transistor, such as drain current capability, transconductance, and threshold voltage degrade with the stress time following a power law as expected. However, the impact ionization measured as the hot-carrier bulk current enhances with the aging process. By comparison with numerical simulations, we corroborate that such an impact ionization boosting is attributed to an enhancement of the longitudinal electric field at the drain side.
DOI:10.1109/LAEDC54796.2022.9908206