Total Ionizing Dose and Reliability Evaluation of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)

Total Ionizing Dose and Reliability Evaluation of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)

We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).

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Bibliographic Details
Published in:2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) pp. 1 - 5
Main Authors: Vartanian, Sergeh, Yang-Scharlotta, Jean, Allen, Gregory R., Daniel, Andrew C., Costanzo, Daniel, Mancoff, Frederick B., Symalla, Daniel, Olsen, Andy
Format: Conference Proceeding
Language:English
Published: IEEE 01-07-2022
Subjects:
Magnetoresistive devices
Nonvolatile memory
Performance evaluation
Reliability
SDRAM
Torque
Total ionizing dose
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Abstract We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).
AbstractList We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).
Author Allen, Gregory R.
Costanzo, Daniel
Yang-Scharlotta, Jean
Vartanian, Sergeh
Daniel, Andrew C.
Olsen, Andy
Mancoff, Frederick B.
Symalla, Daniel
Author_xml – sequence: 1
  givenname: Sergeh
  surname: Vartanian
  fullname: Vartanian, Sergeh
  email: sergeh.vartanian@jpl.nasa.gov
  organization: California Institute of Technology,Jet Propulsion Laboratory,Pasadena,CA,USA,91109
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  givenname: Jean
  surname: Yang-Scharlotta
  fullname: Yang-Scharlotta, Jean
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  organization: California Institute of Technology,Jet Propulsion Laboratory,Pasadena,CA,USA,91109
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  givenname: Gregory R.
  surname: Allen
  fullname: Allen, Gregory R.
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  organization: California Institute of Technology,Jet Propulsion Laboratory,Pasadena,CA,USA,91109
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  givenname: Andrew C.
  surname: Daniel
  fullname: Daniel, Andrew C.
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  organization: California Institute of Technology,Jet Propulsion Laboratory,Pasadena,CA,USA,91109
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  givenname: Daniel
  surname: Costanzo
  fullname: Costanzo, Daniel
  email: fred.mancoff@everspin.com
  organization: California Institute of Technology,Jet Propulsion Laboratory,Pasadena,CA,USA,91109
– sequence: 6
  givenname: Frederick B.
  surname: Mancoff
  fullname: Mancoff, Frederick B.
  email: daniel.symalla@everspin.com
  organization: Everspin Technologies Inc.,Chandler,AZ,USA,85226
– sequence: 7
  givenname: Daniel
  surname: Symalla
  fullname: Symalla, Daniel
  email: andy.olsen@everspin.com
  organization: Everspin Technologies Inc.,Chandler,AZ,USA,85226
– sequence: 8
  givenname: Andy
  surname: Olsen
  fullname: Olsen, Andy
  organization: Everspin Technologies Inc.,Chandler,AZ,USA,85226
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Snippet We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the...
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SubjectTerms Magnetoresistive devices
Nonvolatile memory
Performance evaluation
Reliability
SDRAM
Torque
Total ionizing dose
Title Total Ionizing Dose and Reliability Evaluation of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)
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