Quick Compact Model Development Through Slow Transient Simulation: An Alternative Approach to Table Models for Emerging Nanodevices

• Published in: 2022 20th IEEE Interregional NEWCAS Conference (NEWCAS) pp. 485 - 489
• Main Authors: Reuter, Maximilian, Lee, Dakyung, Riehl, David, Hofmann, Klaus
• Format: Conference Proceeding
• Language: English
• Published: IEEE 19-06-2022
• Subjects: Analytical models; FET; Logic gates; Mathematical models; Redundancy; Semiconductor device modeling; Shape; simulation; table model; transient; Voltage
• DOI: 10.1109/NEWCAS52662.2022.9842125

A transient simulation which proceeds slowly, compared to all dynamic processes, can be designed to generate a multi-dimensional quasistationary dataset. In order to characterize an electrical device/circuit, in this work we explore a simulation design based on frequency-nested cosine functions where before an array of quasistationary voltage sweeps was necessary. We present an example of 3 terminal voltages, each in the range of (-1V, 1V), to demonstrate how to plan granularity of a data set. Then we apply this example setup to a novel semiconductor device. Lastly, we present a method to verify if data from the respective transient simulation can indeed be interpreted as quasistationary data. The proposed methods are described in a generic mathematical way to allow transfer to other dynamic systems incorporating fluidic, mechanic or thermic processes.