Simultaneous, Submicron Infrared and Raman Microspectroscopies for Effective Failure and Contamination Analyses

We demonstrate the analysis of ~1 µm contamination with high signal-to-noise in a simultaneous infrared and Raman microscope at the same time, at the same location and at submicron spatial resolution. This combined technique provides high sensitivity to small sample volumes without melting or damagi...

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Bibliographic Details
Published in:2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 1 - 6
Main Authors: Lo, Michael, Kansiz, Mustafa, Dillon, Eoghan, Anderson, Jay, Marcott, Curtis
Format: Conference Proceeding
Language:English
Published: IEEE 15-09-2021
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Summary:We demonstrate the analysis of ~1 µm contamination with high signal-to-noise in a simultaneous infrared and Raman microscope at the same time, at the same location and at submicron spatial resolution. This combined technique provides high sensitivity to small sample volumes without melting or damaging the samples by using separate infrared excitation and visible laser detection mechanisms. The measurement process does not involve physically contacting the sample, hence simplifying sample preparation and avoiding cross-contamination between sample changes. To showcase this new capability, we provide examples from the contamination in the gap between a solder joint and a non-wetting pad, adhesive residues on a glass panel and foreign matter near a copper post. Such challenges could not be readily resolved with conventional FTIR and Raman techniques. The simultaneous O-PTIR and Raman brings complementary and confirmatory results to analysis previously thought to be difficult to impossible.
ISSN:1946-1550
DOI:10.1109/IPFA53173.2021.9617346