Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests

The power density of pulsed power systems can be increased with the utilization of silicon carbide power devices 1 . With the latest developments in manufacturing techniques, the fabrication of insulated gate bipolar transistor (IGBT) devices with blocking voltages as high as 20 kV are now possible...

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Bibliographic Details

Published in:	2015 IEEE Pulsed Power Conference (PPC) pp. 1 - 3
Main Authors:	Bilbao, Argenis V., Schrock, James A., Ray, William B., Kelley, Mitchell D., Bayne, Stephen B.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2015
Subjects:	Decision support systems Delays Logic gates Resistors Switches Temperature distribution
Online Access:	Get full text
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