Exploring the NBTI Aging and PVT effects on RRAM-based FPGA Multiplexers Performance

• Published in: 2023 IEEE International Integrated Reliability Workshop (IIRW) pp. 1 - 5
• Main Authors: Rizzi, Tommaso, Baroni, Andrea, Bertozzi, Davide, Wenger, Christian, Ielmini, Daniele, Zambelli, Cristian
• Format: Conference Proceeding
• Language: English
• Published: IEEE 08-10-2023
• Subjects: Aging; Degradation; Multiplexing; MUX; NBTI; Negative bias temperature instability; Performance evaluation; Reliability; RRAM; Thermal variables control; Transistors; Variability
• ISSN: 2374-8036
• DOI: 10.1109/IIRW59383.2023.10477644

Among the emerging technologies, Resistive RAM (RRAM) devices are considered a promising candidate for the replacement of Static RAM (SRAM) cells as memory elements in the interconnection fabric of Field Programmable Gate Arrays (FPGAs). Although previous works have investigated their advantages in terms of performance and energy efficiency, these assessments have focused on fresh devices. In this work, the aging degradation on the propagation delay caused by negative bias-temperature instability (NBTI) effects on different-sized multiplexers (MUXs) is studied under various Process-Voltage-Temperature (PVT) conditions. The comparison between the full-CMOS and the RRAM-based implementations reveals that the traditional SRAM-based design is more affected by aging due to the higher number of transistors.