Design of CMOS RF Doherty Power Amplifier in Low-Power 5G Wireless Networks for IoT Application

• Published in: 2023 IEEE 11th Conference on Systems, Process & Control (ICSPC) pp. 310 - 314
• Main Authors: Mohd Farid, N. A., Razak, A. H. A., Halim, A. K., Md Idros, M. F.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 16-12-2023
• Subjects: 5G IoT; 5G mobile communication; CMOS; Doherty Power Amplifier; Internet of Things; low-power; Power amplifiers; Radio frequency; Radio spectrum management; Topology; Wireless networks
• DOI: 10.1109/ICSPC59664.2023.10420155

This paper presents the design of 130nm CMOS RF Doherty Power Amplifier (DPA) in Low-Power 5G Wireless Networks for Internet of Things (IoT) Application. The challenge comes as wireless networks evolve and need 5G- compatible RF power amplifiers that can boost power gain without losing linearity. This project investigated advanced CMOS RF DPA topologies for IoT to increase power gain, and validate that the power amplifier is optimised for low-power 5G communications. The CMOS design circuits was simulated using Cadence Virtuoso software. The designed DPA targeted operating frequency is 1GHz which is the frequency band allocations for low-frequency bands that intended to be used for traditional local coverage applications, IoT, vehicle-to- everything (V2X) and transport infrastructure in 5G applications. At schematic level simulation, the DPA achieved a 117dB power gain and maximum output power of 2.5dBm. The peak PAE achieved is 7%. The CMOS PA operated under the headroom of 1V voltage supply. The designed CMOS RF DPA provides good power gain with a minimum trade-off between linearity and output power which makes it suitable for IoT application.