Asymmetric AlGaAs/GaAs/InGaAs Based Quantum Well Long Wavelength Infrared Photodetector

An asymmetric quantum well structure has been developed for 6-10 μm detection. The asymmetric structure consists of N-doped InGaAs wells, GaAs steps and undoped AlGaAs barriers. Due to the strong coupling effect of the electronic state wave functions, significant absorption is observed. But, the abs...

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Bibliographic Details

Published in:	2020 4th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) pp. 1 - 3
Main Authors:	Billaha, Md Aref, Roy, Bhaskar, Ray, Sutapa, Choudhary, Santosh K., Bishnu, Soham Kanti, Chatterjee, Sanjay, Biswas, Aparna
Format:	Conference Proceeding
Language:	English
Published:	IEEE 02-10-2020
Subjects:	Absorption asymmetric quantum wells Doping Indium Indium concentration Indium gallium arsenide inter-subband absorption Mathematical model Performance evaluation Photodetectors responsivity
Online Access:	Get full text
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