A novel floating gate spacer polysilicon TFT

A novel floating gate spacer polysilicon TFT

This paper reports on a new polysilicon NMOS TFT device utilizing a polysilicon floating gate spacer (FGS) to reduce the OFF-state leakage current and suppress the kink effect while maintaining a reasonable ON current. The new device has demonstrated a better ON/OFF current ratio than both conventio...

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Bibliographic Details
Published in:IEEE International Electron Devices Meeting, 1993 pp. 393 - 396
Main Authors: Tiemin Zhao, Min Cao, Plummer, J.D., Saraswat, K.C.
Format: Conference Proceeding Journal Article
Language:English
Published: IEEE 1993
Subjects:
Active matrix liquid crystal displays
Electrons
Fabrication
Implants
Leakage current
Liquid crystal devices
Medical simulation
Random access memory
Thin film transistors
Voltage
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Summary:This paper reports on a new polysilicon NMOS TFT device utilizing a polysilicon floating gate spacer (FGS) to reduce the OFF-state leakage current and suppress the kink effect while maintaining a reasonable ON current. The new device has demonstrated a better ON/OFF current ratio than both conventional non-LDD TFT devices and LDD devices with oxide spacers. The device structure is simple and self-aligned. The FGS concept applies to both active matrix liquid crystal displays (AMLCD) and SRAM applications.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISBN:0780314506
9780780314504
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1993.347326