Direct measurement of the maximum operating region in GaAs HBTs for RF power amplifiers

Direct measurement of the maximum operating region in GaAs HBTs for RF power amplifiers

Current and voltage waveforms of GaAs HBTs at 1 GHz have been directly measured using a microwave waveform measurement system. The maximum operating region has been experimentally investigated by sweeping load lines. The limits of a small input power are found to come from the thermal runaway and av...

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Bibliographic Details
Published in:2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Vol. 3; pp. 1687 - 1690 vol.3
Main Authors: Inoue, A., Nakatsuka, S., Suzuki, S., Yamamoto, K., Shimura, T., Hattori, R., Mitsui, Y.
Format: Conference Proceeding Journal Article
Language:English
Published: IEEE 2001
Subjects:
Current measurement
Gallium arsenide
Heterojunction bipolar transistors
Microwave measurements
Power amplifiers
Power measurement
Radio frequency
Radiofrequency amplifiers
Virtual colonoscopy
Voltage
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Summary:Current and voltage waveforms of GaAs HBTs at 1 GHz have been directly measured using a microwave waveform measurement system. The maximum operating region has been experimentally investigated by sweeping load lines. The limits of a small input power are found to come from the thermal runaway and avalanche breakdown of the device. With large input power, the HBT is found to operate beyond the DC limit of thermal runaway.
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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SourceType-Conference Papers & Proceedings-1
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ISBN:0780365380
9780780365384
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2001.967230