Optimization of O2 Plasma After Silicon Etch Process to Prevent Br-Induced Equipment Corrosion and Pattern Abnormality

• Published in: 2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) pp. 1 - 4
• Main Authors: Kang, Junseok, Yang, Ki Dong, Sinn, Soobin, Gim, Gyuwon, Park, Hanbit, Hwang, Wookyoung, Han, Eunyoung, Kim, Young Jeong, Kim, Joong Jung
• Format: Conference Proceeding
• Language: English
• Published: IEEE 13-05-2024
• Subjects: Bromine compounds; Corrosion; Degradation; equipment corrosion; Hydrogen; Hydrogen bromide; Instruments; Moisture; pattern abnormality; post-etch treatment; Semiconductor device manufacture
• ISSN: 2376-6697
• DOI: 10.1109/ASMC61125.2024.10545505

Although hydrogen bromide (HBr) is an effective silicon etchant for patterning, it also generates SiBrx as a contaminant that causes equipment corrosion in the presence of moisture. We can apply O 2 plasma post-etch treatment (PET) to remove this, while it also comes with the risk of triggering abnormal etch profile. As balancing this trade-off relationship by optimizing settings of O 2 PET is essential, our research revealed the behaviors of Br and O on wafers exposed to various O 2 plasma conditions, leading to the determination of optimal O 2 PET settings with 2.5 to 5 percent of oxygen gas composition.