Fabrication and characterization of a bismuth-doped fiber with phosphorus

• Published in: 2018 IEEE 7th International Conference on Photonics (ICP) pp. 1 - 3
• Main Authors: Mansoor, Amilia, Omar, Nasr Y., Dambul, Katrina D., Rashid, Hairul Azhar Abdul, Yusoff, Zulfadzli
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-04-2018
• Subjects: Absorption; Absorption spectrum; bismuth-doped fiber; Doping; emission spectrum; Fabrication; in-situ solution doping; mCVD; Optical fiber amplifiers; Optical fiber networks; Phosphorus; Preforms
• DOI: 10.1109/ICP.2018.8533213

This paper presented the fabrication and characterization of a Bismuth-doped fiber with Phosphorus. The preform was fabricated using conventional modified chemical vapour deposition and in-situ solution doping. The drawn fiber was then characterized in terms of its absorption and emission spectrum. The preliminary results show that the 1 m length Bismuth-doped fiber has an emission spectrum at the broad range of 1300 nm to 1500 nm using forward pumping configuration. Amplification can be achieved by using longer fiber length and different pumping configuration. The Bismuth-doped fiber could potentially be used as a fiber amplifier in a GPON network, which supports the wavelength of 1310 nm (uplink) and 1490 nm (downlink).