GaInAsSb-AlGaAsSb laterally coupled distributed-feedback metamorphic laser grown on a GaAs substrate at 2 μm

GaInAsSb-AlGaAsSb laterally coupled distributed-feedback metamorphic laser grown on a GaAs substrate at 2 μm

We report a metamorphic GaSb-based laterally coupled distributed-feedback laser grown on a GaAs substrate that operates continuous wave at room temperature with a total output power of 40 mW.

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Bibliographic Details
Published in:CLEO: 2013 pp. 1 - 2
Main Authors: Apiratikul, Paveen, Lei He, Richardson, Christopher J. K.
Format: Conference Proceeding
Language:English
Published: The Optical Society 01-06-2013
Subjects:
Gallium arsenide
Gas lasers
Gratings
Laser modes
Power lasers
Semiconductor lasers
Substrates
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Abstract We report a metamorphic GaSb-based laterally coupled distributed-feedback laser grown on a GaAs substrate that operates continuous wave at room temperature with a total output power of 40 mW.
AbstractList We report a metamorphic GaSb-based laterally coupled distributed-feedback laser grown on a GaAs substrate that operates continuous wave at room temperature with a total output power of 40 mW.
Author Apiratikul, Paveen
Lei He
Richardson, Christopher J. K.
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  givenname: Paveen
  surname: Apiratikul
  fullname: Apiratikul, Paveen
  email: paveen@lps.umd.edu
  organization: Lab. for Phys. Sci., College Park, MD, USA
– sequence: 2
  surname: Lei He
  fullname: Lei He
  organization: Lab. for Phys. Sci., College Park, MD, USA
– sequence: 3
  givenname: Christopher J. K.
  surname: Richardson
  fullname: Richardson, Christopher J. K.
  organization: Lab. for Phys. Sci., College Park, MD, USA
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Snippet We report a metamorphic GaSb-based laterally coupled distributed-feedback laser grown on a GaAs substrate that operates continuous wave at room temperature...
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StartPage 1
SubjectTerms Gallium arsenide
Gas lasers
Gratings
Laser modes
Power lasers
Semiconductor lasers
Substrates
Title GaInAsSb-AlGaAsSb laterally coupled distributed-feedback metamorphic laser grown on a GaAs substrate at 2 μm
URI https://ieeexplore.ieee.org/document/6833188
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