GaInAsSb-AlGaAsSb laterally coupled distributed-feedback metamorphic laser grown on a GaAs substrate at 2 μm

We report a metamorphic GaSb-based laterally coupled distributed-feedback laser grown on a GaAs substrate that operates continuous wave at room temperature with a total output power of 40 mW.

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Bibliographic Details
Published in:	CLEO: 2013 pp. 1 - 2
Main Authors:	Apiratikul, Paveen, Lei He, Richardson, Christopher J. K.
Format:	Conference Proceeding
Language:	English
Published:	The Optical Society 01-06-2013
Subjects:	Gallium arsenide Gas lasers Gratings Laser modes Power lasers Semiconductor lasers Substrates
Online Access:	Get full text
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Description
Summary:	We report a metamorphic GaSb-based laterally coupled distributed-feedback laser grown on a GaAs substrate that operates continuous wave at room temperature with a total output power of 40 mW.
ISSN:	2160-8989 2160-9004