Mechanism Investigation of Temperature Dependent Growth and Etching Process of GeCl4 on SiGe Surface: ab-initio Study

Herein, we unveil the deposition and etch mechanism of GeCl 4 on the SiGe surface. At the high temperature, GeCl 4 is dissociated to GeCl 2 and then worked as a deposition source. Thus, the rate determinant step of surface growth is GeCl 4 dissociation, and a novel precursor that quickly dissociates...

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Bibliographic Details

Published in:	2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 233 - 237
Main Authors:	Park, Ji Young, Kim, Gyeom, Kim, Jin Bum, Lee, Sang-Moon, Kim, Sae-jin, Ko, Hyoungsoo, Lee, Seungmin, Lee, Seung Hun, Jang, Inkook, Kim, Dae Sin
Format:	Conference Proceeding
Language:	English
Published:	IEEE 27-09-2021
Subjects:	Ab-initio Atomic layer deposition Deposition Etch Etching Germanium GSM Precursor Surface Reaction Temperature Temperature dependence Thermodynamics
Online Access:	Get full text
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