Modeling and characterization of microwave p-i-n photodiode

• Published in: ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) pp. 239 - 242
• Main Authors: Chizh, A.L., Malyshev, S.A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2000
• Subjects: Charge carrier processes; Electron optics; Indium gallium arsenide; Indium phosphide; Lighting; Microwave circuits; Microwave devices; Partial differential equations; PIN photodiodes; Poisson equations
• ISBN: 9780780359390; 0780359399
• DOI: 10.1109/ASDAM.2000.889490

A numerical one-dimensional drift-diffusion model of the p-i-n photodiode based on the InP/InGaAs/InGaAsP heterostructure which takes into account the influence of an external electric circuit and parasitic elements is presented. S/sub 11/ parameters of the photodiode are theoretically and experimentally investigated under illumination and in the frequency range up to 4 GHz. The theoretical data well correspond to the measured characteristics of the photodiode. This model can be used in the design of p-i-n photodiodes operating in microwave circuits.