Single event effects on commercial SRAMs and power MOSFETs: final results of the CRUX flight experiment on APEX

• Published in: 1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385) pp. 1 - 10
• Main Authors: Barth, J.L., Adolphsen, J.W., Gee, G.B.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1998
• Subjects: Extraterrestrial measurements; Logic devices; MOSFETs; Predictive models; Protons; Random access memory; Satellites; Single event transient; Single event upset; Testing
• ISBN: 9780780351097; 0780351096
• DOI: 10.1109/REDW.1998.731465

The CRUX experiment on the APEX satellite monitored single event effects on 1 Mbit and 256 Kbit SRAMs and 100 volt and 200 volt power MOSFETs. The single event upsets (SEUs) on the SRAMs were mapped in geographic and geomagnetic coordinates. Other single event effects (SEEs) were observed, including multiple bits upsets (MBUs) and single hard errors ("stuck bits"). Sensitivity to programmed logic state was also analyzed. The relatively large sample sizes for most part types and almost two year flight time in a hostile radiation environment provided a data set adequate for investigation of the range in device response within the flight lots. Single event burn-out (SEB) conditions were observed on the power MOSFETs. The rates on the 200 volt devices were much higher than on the 100 volt and occurred primarily in regions of space dominated by trapped protons.